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NCE3080K

NCE NMOS 12-300V. Adecuado para fuentes de alimentación portátiles con almacenamiento de energía, cordless drills, robots aspiradora, small water pumps, high-sp

  • Marca: NCE
  • Tamaño / Encapsulado: TO-252-2L
  • Parámetro: 30V
  • RDS(ON)@4.5V TYP: 6.5mΩ
  • RDS(ON)@10V TYP: 3.7mΩ
  • VGS(th): 1.6V
  • ID: 80A
  • Temp. de funcionamiento: -55-175℃
  • Aplicaciones: fuentes de alimentación portátiles con almacenamiento de energía, cordless drills, robots aspiradora, small water pumps, high-speed blenders
  • Parámetro de producto
  • Marca: NCE
  • Tamaño / Encapsulado: TO-252-2L
  • Parámetro: 30V
  • RDS(ON)@4.5V TYP: 6.5mΩ
  • RDS(ON)@10V TYP: 3.7mΩ
  • VGS(th): 1.6V
  • ID: 80A
  • Temp. de funcionamiento: -55-175℃
  • Aplicaciones: fuentes de alimentación portátiles con almacenamiento de energía, cordless drills, robots aspiradora, small water pumps, high-speed blenders

NCE3080K | NCE 30V N-Channel MOSFET 80A TO-252 | YQM

NCE3080K | 12-300V NMOS

30V Voltage Rating
3.7mΩ RDS(on) Typical
80A Continuous Current
TO-252-2L Package
-55-175℃ Temp. Range

Product Introduction

The NCE3080K uses an advanced trench process and design to provide excellent RDS(ON) performance together with low gate charge characteristics, suitable for a wide range of applications.

Core Advantages

  • Ultra-low on-resistance; low gate charge; fully characterized avalanche voltage and current

Key Features

Ultra-low on-resistancehigh-density cell design with a maximum Rds(on) of only 4.5mΩ@Vgs=10V, low conduction loss under high-current conditions;
Excellent avalanche ruggedness100% single-pulse avalanche UIS tested, single-pulse avalanche energy EAS up to 247mJ; good device consistency and stability, strong immunity in inductive-load and short-circuit surge scenarios, reducing the risk of avalanche failure;
Outstanding heat dissipationTO-252-2L surface-mount power package with junction-to-case thermal resistance RθJC=1.8℃/W; excellent heat conduction achieved together with PCB copper areas; maximum junction temperature up to 175℃ for high-temperature operation;
Ample gate voltage marginVgs rating ±20V versus ±12V for conventional MOSFETs, giving a large over-voltage margin and preventing gate breakdown caused by drive spikes

Alternative Products and Reasons

  • DIODES: DMN3009SK3;
  • ON: NTD4806N;
  • Vishay: SUD50N03-06AP;
  • Replacement Rationale: Parameters matched, package compatible, no PCB redesign required, enabling cost reduction through domestic sourcing.

Applications

🌐
Energy storage and power supplies

small UPS, portable energy storage power supplies, outdoor mobile energy storage, BMS, high-current DC-DC modules, auxiliary power supplies for servers;

💻
Motors and tools

handheld power tools, BLDC motors, high-power water pumps, DC fans, robot vacuums, washing machines;

📶
Industrial and communication equipment

industrial control boards, industrial switching power supplies, communication equipment, base station power supplies;

FAQ

Q: What applications is this product suitable for?

A: The NCE3080K is designed for industrial, communications, automotive, and IoT applications. Contact YQM for application-specific recommendations.

Q: Are samples available?

A: Yes, YQM ELECTRONICS provides free samples of NCE3080K for evaluation. Contact our sales team for quick delivery.

Q: What is the minimum order quantity?

A: MOQ varies by model. YQM offers flexible ordering from prototypes to volume production. Contact us for pricing.

Get NCE3080K Samples & Technical Support

Contact YQM ELECTRONICS for fast samples, competitive pricing, and expert FAE support.

Contact YQM Customer Service
NCE3080K
NCE NMOS 12-300V. Adecuado para fuentes de alimentación portátiles con almacenamiento de energía, cordless drills, robots aspiradora, small water pumps, high-sp
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