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NCE6080K

NCE NMOS 12-300V. Adecuado para fuentes de alimentación de almacenamiento de energía para exteriores, UPS, micro PV inversores, high-power DC-DC, high-speed ble

  • Marca: NCE
  • Tamaño / Encapsulado: TO-252-2L
  • Parámetro: 60V
  • RDS(ON)@4.5V TYP: /
  • RDS(ON)@10V TYP: 6mΩ
  • VGS(th): 2.8V
  • ID: 80A
  • Temp. de funcionamiento: -55-175℃
  • Aplicaciones: fuentes de alimentación de almacenamiento de energía para exteriores, UPS, micro PV inversores, high-power DC-DC, high-speed blenders
  • Parámetro de producto
  • Marca: NCE
  • Tamaño / Encapsulado: TO-252-2L
  • Parámetro: 60V
  • RDS(ON)@4.5V TYP: /
  • RDS(ON)@10V TYP: 6mΩ
  • VGS(th): 2.8V
  • ID: 80A
  • Temp. de funcionamiento: -55-175℃
  • Aplicaciones: fuentes de alimentación de almacenamiento de energía para exteriores, UPS, micro PV inversores, high-power DC-DC, high-speed blenders

NCE6080K | NCE 60V 6mΩ 80A TO-252 N-Channel MOSFET | YQM

NCE6080K | 12-300V NMOS

60V Voltage Rating
6mΩ RDS(on) Typical
80A Continuous Current
TO-252-2L Package
-55-175℃ Temp. Range

Product Introduction

The NCE6080K uses an advanced trench process and design to deliver excellent RDS(ON) performance while maintaining low gate charge, making it suitable for a wide range of applications.

Core Advantages

  • Low gate charge, excellent on-resistance, fully characterized avalanche voltage and current, high EAS, good stability and uniformity, good heat dissipation; 60V/80A in TO-252-2L; EAS=390mJ

Key Features

Low conduction losshigh-density trench cell design, low Rds(on) max of 7mΩ, low conduction loss and heating under high current;
Excellent avalanche reliability100% UIS avalanche testing and 100% ΔVds testing, single-pulse avalanche energy EAS=390mJ, strong immunity to inductive load voltage spikes, high device consistency, reducing the risk of device failure;
Balanced switching characteristicstotal gate charge Qg=90nC, gate charge reasonably controlled while keeping low Rds(on), balancing conduction and switching losses for high-frequency PWM operation;
PackageTO-252-2L surface-mount package with good heat dissipation, suitable for on-board high-power designs without an additional heatsink.

Alternative Products and Reasons

  • ON: NTD5862N;
  • Infineon: IRFR1018E;
  • DIODES: DMTH6006SK
  • Replacement reason: matching parameters, compatible package, no PCB redesign required, enabling localized cost reduction.

Applications

🌐
Power

high-power fast-charge heads, GaN chargers, power adapters, portable energy storage power supplies;

💻
Lithium battery and energy storage

portable energy storage, auxiliary power supplies for electric vehicles, BMS;

📶
Motor drive

small power tools, DC fans, water pumps, robot vacuums;

🔬
Industrial and control

small UPS, industrial DC-DC modules, industrial load switches.

FAQ

Q: What applications is this product suitable for?

A: The NCE6080K is designed for industrial, communications, automotive, and IoT applications. Contact YQM for application-specific recommendations.

Q: Are samples available?

A: Yes, YQM ELECTRONICS provides free samples of NCE6080K for evaluation. Contact our sales team for quick delivery.

Q: What is the minimum order quantity?

A: MOQ varies by model. YQM offers flexible ordering from prototypes to volume production. Contact us for pricing.

Get NCE6080K Samples & Technical Support

Contact YQM ELECTRONICS for fast samples, competitive pricing, and expert FAE support.

Contact YQM Customer Service
NCE6080K
NCE NMOS 12-300V. Adecuado para fuentes de alimentación de almacenamiento de energía para exteriores, UPS, micro PV inversores, high-power DC-DC, high-speed ble
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