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NCE90N800K

Baja RDS(ON), Qg ultrabajo, diodo de cuerpo optimizado y 100 % probado en avalancha.

  • Marca: NCE
  • Tamaño / Encapsulado: TO-252-2L
  • Parámetro: 900V
  • RDS(ON)@4.5V TYP: /
  • RDS(ON)@10V TYP: 700mΩ
  • VGS(th): 3~4V
  • ID: 7A
  • Temp. de funcionamiento: -55-175℃
  • Aplicaciones: Microinversores, medidores inteligentes, medidores monofásicos/trifásicos, cocinas de inducción, licuadoras de alta velocidad y campanas extractoras
  • Parámetro de producto
  • Marca: NCE
  • Tamaño / Encapsulado: TO-252-2L
  • Parámetro: 900V
  • RDS(ON)@4.5V TYP: /
  • RDS(ON)@10V TYP: 700mΩ
  • VGS(th): 3~4V
  • ID: 7A
  • Temp. de funcionamiento: -55-175℃
  • Aplicaciones: Microinversores, medidores inteligentes, medidores monofásicos/trifásicos, cocinas de inducción, licuadoras de alta velocidad y campanas extractoras

NCE90N800K | NCE 900V 7A Superjunction N-Channel MOSFET | YQM

NCE90N800K | 400-1700V NMOS

900V Voltage Rating
700mΩ RDS(on) Typical
7A Continuous Current
TO-252-2L Package
-55-175℃ Temp. Range

Product Introduction

The device uses advanced trench-gate superjunction technology and design, achieving excellent on-resistance (RDS(ON)) while providing extremely low gate charge. This superjunction MOSFET fully meets industry requirements for AC-DC switching mode power supplies (SMPS) in power factor correction (PFC), AC/DC power conversion and industrial power supply applications.

Core Advantages

  • Optimized body diode reverse recovery; low on-resistance and low conduction loss; ultra-low gate charge reducing drive requirements; 100% avalanche tested; small package.

Key Features

Excellent static conduction lossmaximum on-resistance only 800mΩ at 900V high voltage, low conduction loss and good temperature rise performance in an equivalent TO-252 package;
Low gate chargetotal gate charge Qg only 14.6nC; the low Qg means small drive loss and low drive capability requirements for PFC and LLC controllers;
Dedicated body diode optimizationoptimized body diode reverse recovery, trr typically 200ns, Qrr=1.45μC, low reverse recovery charge suppressing reverse recovery spikes and reducing oscillation and EMI noise; suitable for LLC half-bridge and PFC circuits with freewheeling conditions, cutting the losses and interference caused by the diode;
Device robustness and reliability100% avalanche tested, with single-pulse avalanche current Ias=1A surge capability; strong withstand against grid surges and abnormal inductive turn-off conditions, improving overall power supply reliability.

Alternative Products and Reasons

  • Alternatives: Infineon: IPD90R1K2C
  • Reason: matching parameters, compatible package, no redesign required, enabling localization and cost reduction.

Applications

🌐
Industrial power supplies

uninterruptible power supplies (UPS), industrial control power supplies, auxiliary power supplies for industrial control equipment, telecom base station power supplies, micro-inverters;

💻
Lighting

constant-current LED street lights, industrial LED lighting, outdoor drivers;

📶
Consumer power supplies

desktop adapters, high-power chargers, desktop PCs, range hoods, air purifiers, high-speed blenders.

FAQ

Q: What applications is this product suitable for?

A: The NCE90N800K is designed for industrial, communications, automotive, and IoT applications. Contact YQM for application-specific recommendations.

Q: Are samples available?

A: Yes, YQM ELECTRONICS provides free samples of NCE90N800K for evaluation. Contact our sales team for quick delivery.

Q: What is the minimum order quantity?

A: MOQ varies by model. YQM offers flexible ordering from prototypes to volume production. Contact us for pricing.

Get NCE90N800K Samples & Technical Support

Contact YQM ELECTRONICS for fast samples, competitive pricing, and expert FAE support.

Contact YQM Customer Service
NCE90N800K
Baja RDS(ON), Qg ultrabajo, diodo de cuerpo optimizado y 100 % probado en avalancha.
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