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NCEP40T11G

NCE NMOS 12-300V. Adecuado para Drone power ESCs, servidores, telecom power supplies, industrial routers, energy storage BMS boards.

  • Marca: NCE
  • Tamaño / Encapsulado: DFN5X6-8L
  • Parámetro: 40V
  • RDS(ON)@4.5V TYP: 3.3mΩ
  • RDS(ON)@10V TYP: 2.2mΩ
  • VGS(th): 1.7V
  • ID: 110A
  • Temp. de funcionamiento: -55-150℃
  • Aplicaciones: Drone power ESCs, servidores, telecom power supplies, industrial routers, energy storage BMS boards
  • Parámetro de producto
  • Marca: NCE
  • Tamaño / Encapsulado: DFN5X6-8L
  • Parámetro: 40V
  • RDS(ON)@4.5V TYP: 3.3mΩ
  • RDS(ON)@10V TYP: 2.2mΩ
  • VGS(th): 1.7V
  • ID: 110A
  • Temp. de funcionamiento: -55-150℃
  • Aplicaciones: Drone power ESCs, servidores, telecom power supplies, industrial routers, energy storage BMS boards

NCEP40T11G | NCE 40V 2.2mΩ 110A DFN5X6 N-Ch MOSFET | YQM

NCEP40T11G | 12-300V NMOS

40V Voltage Rating
2.2mΩ RDS(on) Typical
110A Continuous Current
DFN5X6-8L Package
-55-150℃ Temp. Range

Product Introduction

The NCEP40T11G uses Super Trench technology, uniquely optimized to deliver the most efficient high-frequency switching performance. Thanks to the very low combined RDS(ON) and Qg, both conduction loss and switching loss are minimized. This device is ideal for high-frequency switching and synchronous rectification applications.

Core Advantages

  • Ultra-low on-resistance, low gate charge, 100% UIS tested; 40V/110A in DFN5X6-8L; RDS(ON) 2.2mΩ@10V; EAS=500mJ; excellent heat dissipation with RθJC=1.25℃/W

Key Features

Ultra-low on-resistanceSuper Trench process, Rds(on) typically 2.2mΩ@Vgs=10V and 3.3mΩ@Vgs=4.5V, low conduction loss under high-current conditions;
Excellent FOMbalances conduction and switching losses; gate charge is controlled while keeping low on-resistance, suitable for high-frequency switching and synchronous rectification while reducing both conduction and switching losses;
Excellent heat dissipationDFN5×6-8L package with a large exposed pad, junction-to-case thermal resistance RθJC=1.25℃/W for superior thermal performance;
Avalanche ruggedness100% UIS and 100% ΔVds dual testing, single-pulse avalanche energy EAS=500mJ, good device consistency, withstands inductive load surges and pulse impacts.

Alternative Products and Reasons

  • AOS: AON6144;
  • MCC: MCAC130N
  • Replacement reason: matching parameters, compatible package, no PCB redesign required, enabling localized cost reduction.

Applications

🌐
Energy storage and power

portable energy storage power supplies, BMS, PD fast charging, multi-port high-power adapters, small UPS, industrial modular power supplies;

💻
Motor and power equipment

handheld lithium tools, robot vacuums, washing machines, drones, heavy-duty DC water pumps, high-power fans, AGVs, light electric vehicles;

📶
Communications and industrial control

servers, switches, 5G equipment, industrial control boards, high-power PoE modules.

FAQ

Q: What applications is this product suitable for?

A: The NCEP40T11G is designed for industrial, communications, automotive, and IoT applications. Contact YQM for application-specific recommendations.

Q: Are samples available?

A: Yes, YQM ELECTRONICS provides free samples of NCEP40T11G for evaluation. Contact our sales team for quick delivery.

Q: What is the minimum order quantity?

A: MOQ varies by model. YQM offers flexible ordering from prototypes to volume production. Contact us for pricing.

Get NCEP40T11G Samples & Technical Support

Contact YQM ELECTRONICS for fast samples, competitive pricing, and expert FAE support.

Contact YQM Customer Service
NCEP40T11G
NCE NMOS 12-300V. Adecuado para Drone power ESCs, servidores, telecom power supplies, industrial routers, energy storage BMS boards.
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