NCE30P25S
High power, high current capability
- Brand： NCE
- Size/Package： SOP-8
- Parameter： -30V
- RDS(ON)@4.5V TYP： 8.3mΩ
- RDS(ON)@10V TYP： 6.4mΩ
- VGS(th)： -1.5V
- ID： -25A
- Operating Temp： -55-150℃
- Applications： Telecom Base Station Power Supply
- Parameters
- Brand： NCE
- Size/Package： SOP-8
- Parameter： -30V
- RDS(ON)@4.5V TYP： 8.3mΩ
- RDS(ON)@10V TYP： 6.4mΩ
- VGS(th)： -1.5V
- ID： -25A
- Operating Temp： -55-150℃
- Applications： Telecom Base Station Power Supply
P-Channel MOSFETs | NCE30P25S -30V
Product Introduction
NCE30P25S is a -30V Trench MOSFET from NCE/新洁能. 6.4mΩ RDS(on), -25A ID in SOP-8 package. Operating temperature: -55-150℃.
-30V P-Channel MOSFET. High power handling, advanced trench process, ultra-low RDS(on). Excellent conductivity and thermal stability for compact power designs.
Core Advantages
- Advanced Trench Technology: 6.4mΩ RDS(on) — delivering low conduction losses and high efficiency in switching applications.
- High Current Capability: Rated -25A in SOP-8 — optimized for power-dense designs requiring compact footprint with robust current handling.
- Wide Temperature Range: Operating from -55-150℃ — suitable for industrial and harsh-environment applications.
- NCE Quality: Manufactured with advanced process technology. 100% tested for reliability. Competitive domestic supply chain advantage.
Key Features
Applications
DC-DC, SMPS, load switching, battery protection
Motor drives, PLC, automation, instrumentation
BMS, DC-DC, infotainment, body electronics
Controllers, smart appliances, IoT devices
Solar inverters, energy storage, UPS
Switching regulators, power management, motor control
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