NCE75ED65VT4
Adv. FS field-stop G7, low VCE(sat), fast switching
- Brand： NCE
- Size/Package： TO-247-4L
- Parameter： 650V
- VCE(sat)(V) Typ： 1.45V
- VCE(sat)(V) Max： 1.9V
- VGE(th)： 4.75V
- VGES(V)： ±30V
- Switching Frequency： 0-60KHZ
- IC(A)100℃： 75A
- Operating Temp： -40 -175℃
- Applications： Welding Power Supply, Inverters, UPS
- Parameters
- Brand： NCE
- Size/Package： TO-247-4L
- Parameter： 650V
- VCE(sat)(V) Typ： 1.45V
- VCE(sat)(V) Max： 1.9V
- VGE(th)： 4.75V
- VGES(V)： ±30V
- Switching Frequency： 0-60KHZ
- IC(A)100℃： 75A
- Operating Temp： -40 -175℃
- Applications： Welding Power Supply, Inverters, UPS
IGBTs | NCE75ED65VT4 650V TO-247-4L
Product Introduction
NCE75ED65VT4 is a 650V/75A FS (Field Stop) 7th-generation trench IGBT from NCE/新洁能 in TO-247-4L package. Featuring VCE(sat) 1.45V typical, 0-60kHz switching frequency, and 175°C Tj max. Advanced FS7 technology delivers exceptional conduction and switching performance with uniform parameter distribution and excellent temperature stability — ideal for solar inverters, UPS, and motor drives.
Core Advantages
- FS 7th-Gen Technology: VCE(sat) 1.45V typ — advanced field-stop trench design minimizes conduction losses while maintaining fast switching.
- 175°C Tj(max): High-temperature operation with excellent parameter distribution and thermal stability — reduces derating in harsh environments.
- 0-60kHz Switching: Optimized for medium-frequency hard-switching topologies — solar boost converters, UPS inverters, motor VFDs.
- Easy Paralleling: Positive VCE(sat) temperature coefficient enables convenient parallel operation for higher power levels.
Key Features
Applications
PV boost converters, inverter bridges, MPPT
Online UPS inverters, battery chargers
VFD, servo drives, industrial automation
Welding machines, induction heating, SMPS
OBC PFC, DC-DC converters
Grid-tied storage, bidirectional converters
FAQ
Q: IGBT vs SiC MOSFET — which to choose for solar inverters?
A: For ≤20kHz solar boost converters and inverter bridges, FS7 IGBTs like NCE75ED65VT4 offer excellent cost-performance. If your design requires >50kHz switching or >98.5% efficiency, consider NCE SiC MOSFETs (NCES075Pxxx series). Many designs use a hybrid approach — SiC for the boost stage, IGBT for the inverter bridge.
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