NCES120P040T4

SiC MOSFETs | NCES120P040T4 1200V TO-247-4L

Product Introduction

NCES120P040T4 is a 1200V SiC MOSFET from NCE/新洁能 in TO-247-4L with Kelvin source, featuring 40mΩ RDS(on). The 1200V rating addresses high-voltage applications including solar string inverters, EV traction inverters, and industrial power supplies. TO-247-4L package with dedicated Kelvin source unleashes full SiC switching performance.

Core Advantages

• 1200V Rating: 40mΩ at 1200V — addresses high-voltage applications beyond typical 650V/750V SiC devices, enabling 800V battery systems and 1500V solar architectures.
• TO-247-4L Kelvin Source: Decouples power and gate loops for clean, fast switching with minimal ringing in high-voltage circuits.
• Near-Zero Qrr: SiC body diode eliminates reverse recovery tail — dramatically reduces turn-on losses in bridge topologies.
• 175°C Operation: Reliable at junction temperatures up to 175°C with simple gate drive.

Key Features

Applications

FAQ

Q: 1200V vs 750V SiC — which to choose?

A: 1200V SiC is designed for 800V battery systems (EV) and 1500V solar architectures where 750V devices lack sufficient voltage margin. For 400V battery systems and standard solar inverters (≤1000V), 650V/750V SiC typically offers better cost-performance. Choose 1200V when your DC bus exceeds 500V nominal.

Related Products

• → Browse All Products