NCES075P042D7

SiC MOSFETs | NCES075P042D7 750V TO263-7L

Product Introduction

NCES075P042D7 is a 750V silicon carbide (SiC) MOSFET from NCE/新洁能, delivering industry-leading 42mΩ RDS(on) in a TO263-7L surface-mount package with dedicated Kelvin source connection. By leveraging wide-bandgap SiC technology, this device achieves dramatically lower switching losses, faster switching speeds, and higher temperature capability compared to silicon Super-Junction MOSFETs — enabling smaller, cooler, and more efficient power converters.

The Kelvin source pin fully unleashes SiC's high-speed switching potential by minimizing gate loop inductance. Ideal for high-frequency power conversion in solar inverters, EV on-board chargers, DC-DC converters, and switch-mode power supplies.

Core Advantages

• 750V SiC Wide-Bandgap: 42mΩ RDS(on) with near-zero reverse recovery charge — eliminates Si MOSFET body diode losses in hard-switching topologies.
• Kelvin Source TO263-7L: Dedicated driver source pin decouples power and gate loops, maximizing switching speed while minimizing ringing and false turn-on.
• Easy Paralleling: Positive RDS(on) tempco enables automatic current sharing. Simple 0/+18V gate drive — no negative bias needed.
• 175°C Tj(max): Wide-bandgap enables reliable operation at junction temperatures up to 175°C, reducing cooling requirements.

Key Features

Applications

FAQ

Q: SiC vs Silicon Super-Junction — when to switch?

A: SiC excels above 50kHz where near-zero Qrr cuts turn-on losses 50-70% vs Si. Also preferred for: >98% efficiency targets in bridgeless PFC/LLC, 175°C Tj operation, and systems where smaller magnetics justify the per-unit premium.

Q: Do I need negative gate drive?

A: No. The Kelvin source pin effectively suppresses gate ringing and prevents parasitic turn-on — a simple +15V to +18V isolated gate driver with 2-5Ω gate resistor is sufficient.

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