Item	Symbol	Specifications		Conditions / Remarks
Item	Symbol	VC-TCXO	TCXO	Conditions / Remarks
Output frequency range	f₀	10 MHz to 55MHz		Please contact us except for standard frequency
Output frequency range	f₀	19.2MHz , 26MHz , 38.4MHz		Standard frequency
Supply voltage	V_CC	1.8V ±0.1V / 2.8V ±5% / 3.0V ±5% / 3.3V ±5%		Supply voltage range:1.7V to 3.63V
Storage temperature	T_stg	-40°C to +90°C		Storage as single product.
Operating temperature	T_use	G: -40°C to +85°C
Frequency tolerance	f_tol	±1.5 ×10^-6 Max.		After reflow,+25°C
Frequency / temperature characteristics	f₀-T_C	C: ±0.5 × 10^-6 Max. / G: -40°C to +85°C F: ±2.0 × 10^-6 Max. / G: -40°C to +85°C
Frequency / load coefficient	f₀-Load	±0.1 × 10^-6 Max.		10kΩ // 10pF ±10%
Frequency/ voltage coefficient	f₀-V_CC	±0.1 × 10^-6 Max.		V_CC± 5%
Frequency aging	f_age	±0.5 × 10^-6 Max.		+25°C,First year, 10 MHz 12 MHz ≦ f₀≦ 20 MHz 24 MHz ≦ f₀≦ 40 MHz
Frequency aging	f_age	±1.5 × 10^-6 Max.		+25°C,First year, 10 MHz < f₀< 12 MHz 20 MHz < f₀< 24 MHz 40 MHz < f₀≦ 55 MHz
Current consumption	I_CC	1.5 mA Max.		10 MHz ≦ f₀≦ 26 MHz
		1.8 mA Max.		26 MHz < f₀≦ 40 MHz
		2.0 mA Max.		40 MHz < f₀≦ 50 MHz
		2.1 mA Max.		50 MHz < f₀≦ 55 MHz
Input resistance	Rin	500 kΩ Min.	-	V_C - GND(DC)
Frequency control range	f_cont	±8.0 × 10^-6 to ±12 × 10^-6	-	B: V_C =0.9V ±0.6V (V_CC=1.8V) C: V_C =1.4V ±1.0V (V_CC=2.8V) D: V_C =1.5V ±1.0V (V_CC=3.0V) E: V_C =1.65V ±1.0V (V_CC=3.3V)
Frequency change polarity	-	Positive polarity	-
Symmetry	SYM	45% to 55%		GND level(DC cut)
Output voltage	V_PP	0.8V Min.		peak to peak
Start-up time	t_str	1.0 ms Max.		t=0 st 90% Vcc
Output load condition	Load_R	10kΩ		DC cut capacitor = 0.01µF
Output load condition	Load_C	10pF		DC cut capacitor = 0.01µF

Note:Please contact us for requirements not listed in this specification.

External dimensions

(unit: mm)

Please keep "N.C." pin OPEN condition or GND connection.
"N.C." pin doesn’t work as a ground pin.

Footprint

(Unit: mm)

To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between Vcc - GND).

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