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YQAG1116LX: Ultra-Low Rds(on) N-Channel Power MOSFET for High-Efficiency Applications

Time: 2025-12-19 15:15:26


The YQAG1116LX is an N-Channel enhancement-mode power MOSFET. It represents another core product designed for high-performance, high-density power supply applications.

 

The YQAG1116LX is an N-Channel MOSFET featuring advanced trench technology and an optimized chip design. Its primary design objectives are to achieve ultra-low on-state resistance, excellent switching performance, and higher power efficiency, making it particularly suitable for synchronous rectification and switching circuits with extremely high demands for efficiency and thermal management.

 

Key Features and Parameters

1.  Channel Type: N-Channel

    This is one of the most commonly used types of MOSFET. The device turns on when a positive voltage is applied to the gate (G) relative to the source (S). It is typically used as a low-side switch (connected between the load and ground) or as the bottom switch in synchronous rectification topologies.

 

2.  Extremely Low On-Resistance

    This is the most prominent highlight of the YQAG1116LX. Its on-resistance value is exceptionally low.

    Typical Data: At Vgs=10V, the typical Rds(on) is as low as 1.6mΩ (maximum is typically around 2.0mΩ).

    At Vgs=4.5V, it also maintains a very low on-resistance (typical value ~2.0mΩ), enabling efficient operation in applications driven by 5V or lower voltages.

    The extremely low Rds(on) directly translates to lower conduction losses and higher system efficiency.

 

3.  High Continuous Drain Current

    Benefiting from its low-resistance design, it can handle high continuous currents, with Id reaching +100A or higher (specific value subject to the datasheet and depends on test conditions such as Tc temperature). This indicates a strong power handling capability.

 

4.  Excellent Switching Characteristics

    It features low gate charge and low turn-on/turn-off times. This results in minimal switching losses during operation in high-frequency switching power supplies (e.g., DC-DC converters), helping to improve overall efficiency at high frequencies.

 

5.  Package

    Typically employs advanced surface-mount packages like DFN5x6-8L or similar.

 

Primary Application Areas

 


Leveraging its N-Channel characteristics and ultra-low resistance, the YQAG1116LX is primarily applied in fields requiring high-efficiency energy conversion:

 

1.  Synchronous Rectification

    This is its most classic and critical application scenario. On the secondary side of modern switch-mode power supplies (e.g., AC-DC adapters, server power supplies, telecom power supplies), it is used to replace traditional Schottky rectifier diodes.

    Due to its extremely low Rds(on), the conduction voltage drop is far lower than the forward voltage drop of a diode. This can significantly reduce losses during rectification, markedly improving power supply efficiency (especially in low output voltage, high current applications like 5V/20A).

 

2.  DC-DC Buck Converters

    In synchronous buck circuits, the YQAG1116LX is often used as the bottom switch (synchronous rectifier FET), working in conjunction with a top switch (control FET). Its low on-resistance and good switching performance are key to ensuring high efficiency and high power density for the entire converter.

 

3.  Motor Drive and Speed Control

    Used as a core power switching element in high-current H-bridge or three-phase inverter drive circuits for power tools, drones, robots, etc. Its high current capability and low losses help extend battery life and reduce heat generation.

 

4.  Battery Protection and Load Switching

    Used as a switching FET in battery management systems or high-current discharge paths. While P-MOSFETs are more commonly used for high-side switching, N-MOSFETs are also an option in low-side configurations or specific circuits.

 

5.  Various Power Management Systems

    Suitable for power sections in communication equipment, computing equipment, and industrial equipment with extreme demands for efficiency.

 

The YQAG1116LX is a high-end N-Channel power MOSFET, with its signature 'extremely low on-resistance' as its core competitive advantage. It primarily serves power designs pursuing the utmost in efficiency and power density, demonstrating outstanding performance especially in the critical application of synchronous rectification. Combined with its excellent current capability and modern packaging, it is a powerful domestic choice for engineers designing high-performance, high-reliability power products.


YQAG1116LX: Ultra-Low Rds(on) N-Channel Power MOSFET for High-Efficiency Applications

Time: 2025-12-19 15:15:26


The YQAG1116LX is an N-Channel enhancement-mode power MOSFET. It represents another core product designed for high-performance, high-density power supply applications.

 

The YQAG1116LX is an N-Channel MOSFET featuring advanced trench technology and an optimized chip design. Its primary design objectives are to achieve ultra-low on-state resistance, excellent switching performance, and higher power efficiency, making it particularly suitable for synchronous rectification and switching circuits with extremely high demands for efficiency and thermal management.

 

Key Features and Parameters

1.  Channel Type: N-Channel

    This is one of the most commonly used types of MOSFET. The device turns on when a positive voltage is applied to the gate (G) relative to the source (S). It is typically used as a low-side switch (connected between the load and ground) or as the bottom switch in synchronous rectification topologies.

 

2.  Extremely Low On-Resistance

    This is the most prominent highlight of the YQAG1116LX. Its on-resistance value is exceptionally low.

    Typical Data: At Vgs=10V, the typical Rds(on) is as low as 1.6mΩ (maximum is typically around 2.0mΩ).

    At Vgs=4.5V, it also maintains a very low on-resistance (typical value ~2.0mΩ), enabling efficient operation in applications driven by 5V or lower voltages.

    The extremely low Rds(on) directly translates to lower conduction losses and higher system efficiency.

 

3.  High Continuous Drain Current

    Benefiting from its low-resistance design, it can handle high continuous currents, with Id reaching +100A or higher (specific value subject to the datasheet and depends on test conditions such as Tc temperature). This indicates a strong power handling capability.

 

4.  Excellent Switching Characteristics

    It features low gate charge and low turn-on/turn-off times. This results in minimal switching losses during operation in high-frequency switching power supplies (e.g., DC-DC converters), helping to improve overall efficiency at high frequencies.

 

5.  Package

    Typically employs advanced surface-mount packages like DFN5x6-8L or similar.

 

Primary Application Areas

 


Leveraging its N-Channel characteristics and ultra-low resistance, the YQAG1116LX is primarily applied in fields requiring high-efficiency energy conversion:

 

1.  Synchronous Rectification

    This is its most classic and critical application scenario. On the secondary side of modern switch-mode power supplies (e.g., AC-DC adapters, server power supplies, telecom power supplies), it is used to replace traditional Schottky rectifier diodes.

    Due to its extremely low Rds(on), the conduction voltage drop is far lower than the forward voltage drop of a diode. This can significantly reduce losses during rectification, markedly improving power supply efficiency (especially in low output voltage, high current applications like 5V/20A).

 

2.  DC-DC Buck Converters

    In synchronous buck circuits, the YQAG1116LX is often used as the bottom switch (synchronous rectifier FET), working in conjunction with a top switch (control FET). Its low on-resistance and good switching performance are key to ensuring high efficiency and high power density for the entire converter.

 

3.  Motor Drive and Speed Control

    Used as a core power switching element in high-current H-bridge or three-phase inverter drive circuits for power tools, drones, robots, etc. Its high current capability and low losses help extend battery life and reduce heat generation.

 

4.  Battery Protection and Load Switching

    Used as a switching FET in battery management systems or high-current discharge paths. While P-MOSFETs are more commonly used for high-side switching, N-MOSFETs are also an option in low-side configurations or specific circuits.

 

5.  Various Power Management Systems

    Suitable for power sections in communication equipment, computing equipment, and industrial equipment with extreme demands for efficiency.

 

The YQAG1116LX is a high-end N-Channel power MOSFET, with its signature 'extremely low on-resistance' as its core competitive advantage. It primarily serves power designs pursuing the utmost in efficiency and power density, demonstrating outstanding performance especially in the critical application of synchronous rectification. Combined with its excellent current capability and modern packaging, it is a powerful domestic choice for engineers designing high-performance, high-reliability power products.


   

 

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